High power, high efficiency quantum cascade lasers with reduced electron leakage
文献类型：专利
| 作者 | BOTEZ, DAN; SHIN, JAE CHEOL |
| 发表日期 | 2012-12-04 |
| 专利号 | US8325774 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High power, high efficiency quantum cascade lasers with reduced electron leakage |
| 英文摘要 | Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron injector, an active region, and an electron extractor. The active region of the semiconductor structures includes a configuration of quantum wells and barriers that virtually suppresses electron leakage, thereby providing laser devices including such structures with superior electro-optical characteristics. |
| 公开日期 | 2012-12-04 |
| 申请日期 | 2010-08-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47603]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN,SHIN, JAE CHEOL. High power, high efficiency quantum cascade lasers with reduced electron leakage. US8325774. 2012-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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