Semiconductor laser device and method of manufacturing same
文献类型：专利
| 作者 | KONUSHI, FUMIHIRO; OHKUBO, NOBUHIRO; KAWATO, SHINICHI |
| 发表日期 | 2004-09-28 |
| 专利号 | US6798808 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method of manufacturing same |
| 英文摘要 | In a semiconductor laser device having a quantum well active layer, an undoped thin spacer layer is formed between an undoped optical guide layer and a p-type cladding layer. The thickness of the spacer layer is preferably 5 nm or more but less than 10 nm. The spacer layer absorbs impurities diffusing thereinto from the p-type cladding layer. Thus, the dopant is prevented from being diffused into the undoped optical guide layer. |
| 公开日期 | 2004-09-28 |
| 申请日期 | 2000-01-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47604]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KONUSHI, FUMIHIRO,OHKUBO, NOBUHIRO,KAWATO, SHINICHI. Semiconductor laser device and method of manufacturing same. US6798808. 2004-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。