Method of making P-type compound semiconductor employing trimethylgallium, trimethylarsenic and arsine
文献类型：专利
| 作者 | ANDO, KOJI; YAGI, TETSUYA |
| 发表日期 | 1992-12-22 |
| 专利号 | US5173445 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making P-type compound semiconductor employing trimethylgallium, trimethylarsenic and arsine |
| 英文摘要 | A P-type compound semiconductor layer doped with carbon is formed on a semi-insulating substrate by placing the substrate in a reactor, and carrying out vapor-phase epitaxy by feeding vapors of an organic metal having a methyl radical, arsine, and an alkyl compound of arsenic substantially simultaneously into the reactor so that a C-doped P-type compound semiconductor is deposited on the substrate. |
| 公开日期 | 1992-12-22 |
| 申请日期 | 1991-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47606]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ANDO, KOJI,YAGI, TETSUYA. Method of making P-type compound semiconductor employing trimethylgallium, trimethylarsenic and arsine. US5173445. 1992-12-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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