Method of making a surface emitting semiconductor laser
文献类型：专利
| 作者 | JEWELL, JACK L.; SCHERER, AXEL |
| 发表日期 | 1991-07-23 |
| 专利号 | US5034344 |
| 著作权人 | BELL COMMUNICATIONS RESEARCH, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making a surface emitting semiconductor laser |
| 英文摘要 | A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam etching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region. |
| 公开日期 | 1991-07-23 |
| 申请日期 | 1990-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47614]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL COMMUNICATIONS RESEARCH, INC. |
| 推荐引用方式 GB/T 7714 | JEWELL, JACK L.,SCHERER, AXEL. Method of making a surface emitting semiconductor laser. US5034344. 1991-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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