Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser
文献类型：专利
| 作者 | UENO, MASAKI; KYONO, TAKASHI |
| 发表日期 | 2012-10-23 |
| 专利号 | US8295317 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser |
| 英文摘要 | A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film. |
| 公开日期 | 2012-10-23 |
| 申请日期 | 2010-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47629]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | UENO, MASAKI,KYONO, TAKASHI. Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser. US8295317. 2012-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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