Nitride semiconductor lasers and its manufacturing method
文献类型：专利
| 作者 | TSUCHIYA, TOMONOBU; TANAKA, SHIGEHISA; TERANO, AKIHISA |
| 发表日期 | 2009-09-29 |
| 专利号 | US7596160 |
| 著作权人 | USHIO OPTO SEMICONDUCTORS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor lasers and its manufacturing method |
| 英文摘要 | A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current. |
| 公开日期 | 2009-09-29 |
| 申请日期 | 2007-08-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47633]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | USHIO OPTO SEMICONDUCTORS, INC. |
| 推荐引用方式 GB/T 7714 | TSUCHIYA, TOMONOBU,TANAKA, SHIGEHISA,TERANO, AKIHISA. Nitride semiconductor lasers and its manufacturing method. US7596160. 2009-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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