Vertical-cavity surface-emitting semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI, YASUHIRO; CHINO, TOYOJI; MATSUDA, KENICHI |
| 发表日期 | 1996-04-30 |
| 专利号 | US5513202 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical-cavity surface-emitting semiconductor laser |
| 英文摘要 | A vertical-cavity surface-emitting semiconductor laser includes: a p-type bottom mirror having an upper face; a p-type spacer layer covering over the entire upper face of the p-type bottom mirror; an active region including an active layer having a bottom face smaller than the upper face of the p-type bottom mirror, the active region being formed on the p-type spacer layer; an n-type spacer layer formed on the active region; and an n-type top mirror formed on the n-type spacer layer, wherein a sum d of optical path lengths of the p-type spacer layer, the active region and the n-type spacer layer in a perpendicular direction satisfies a relationship expressed by d=(1+n). lambda /2 (n: natural number) with respect to a wavelength lambda of light oscillated from the active region. |
| 公开日期 | 1996-04-30 |
| 申请日期 | 1995-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47636]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KOBAYASHI, YASUHIRO,CHINO, TOYOJI,MATSUDA, KENICHI. Vertical-cavity surface-emitting semiconductor laser. US5513202. 1996-04-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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