超短パルスレーザ光発生装置
文献类型：专利
| 作者 | 広瀬 正則 |
| 发表日期 | 1998-03-20 |
| 专利号 | JP2760451B2 |
| 著作权人 | 松下電子工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 超短パルスレーザ光発生装置 |
| 英文摘要 | PURPOSE:To enable a laser ray emitting device to stably generate picosecond pulses excellent in reproducibility by a method wherein a double hetero junction structure functioning as a gain medium of a semiconductor and a multi-quantum well serving as a saturable absorbent are monolithically integrated in the same substrate, and a single outer mirror is used. CONSTITUTION:A double hetero junction (DH) structure 1 and a multi-quantum well film 2 formed of a GaAs/AlGaAs layer are grown on a GaAs substrate through an organic metal vapor growth method. Furthermore, a cone-shaped groove is formed so far as to reach to the double hetero junction (DH) structure 1, a high reflectivity coating film 3 of Al2O3/Si multilayered film is formed on one side of the substrate, a low reflectivity coating film 4 of Al2O3 film is formed on the other side of the substrate, and a spherical mirror 60% in reflectivity is used as an output mirror 5. |
| 公开日期 | 1998-05-28 |
| 申请日期 | 1990-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47646]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電子工業株式会社 |
| 推荐引用方式 GB/T 7714 | 広瀬 正則. 超短パルスレーザ光発生装置. JP2760451B2. 1998-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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