Vertical-cavity surface-emitting semiconductor laser diode and method for the manufacture thereof
文献类型：专利
| 作者 | AMANN, MARKUS-CHRISTIAN; ORTSIEFER, MARKUS |
| 发表日期 | 2012-12-11 |
| 专利号 | US8331412 |
| 著作权人 | VERTILAS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical-cavity surface-emitting semiconductor laser diode and method for the manufacture thereof |
| 英文摘要 | The present invention includes a vertical-cavity surface-emitting semiconductor laser diode having a resonator with a first distributed Bragg reflector, an active zone which has a p-n junction and is embedded into a semiconductor layer sequence, and a second distributed Bragg reflector. The semiconductor laser diode has an emission wavelength λ, wherein a periodic structure is arranged within the resonator as an optical grating made of semiconductive material and dielectric material, the main plane of extension of which is arranged substantially perpendicularly to the direction of emission of the semiconductor laser diode. The periodic structure is in direct contact with at least one of the semiconductor layers embedding the active zone and with at least one of the two distributed Bragg reflectors. |
| 公开日期 | 2012-12-11 |
| 申请日期 | 2009-11-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47649]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VERTILAS GMBH |
| 推荐引用方式 GB/T 7714 | AMANN, MARKUS-CHRISTIAN,ORTSIEFER, MARKUS. Vertical-cavity surface-emitting semiconductor laser diode and method for the manufacture thereof. US8331412. 2012-12-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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