Fabrication of vertical cavity surface emitting laser with current confinement
文献类型：专利
| 作者 | HIBBS-BRENNER, MARY K.; BIARD, JAMES R. |
| 发表日期 | 1999-04-13 |
| 专利号 | US5893722 |
| 著作权人 | HONEYWELL INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Fabrication of vertical cavity surface emitting laser with current confinement |
| 英文摘要 | A vertical cavity surface emitting laser having a planar structure, having an implantation or diffusion at the top of the mirror closest to the substrate or at the bottom of the mirror farthest from the substrate, to provide current confinement with the gain region, and having an active region and another mirror formed subsequent to the implantation or diffusion. This structure has an implantation or diffusion that does not damage or detrimentally affect the gain region, and does provide dimensions of current confinement that are accurately ascertained. Alternatively, the implantation or diffusion for current confinement may be placed within the top mirror, and several layers above the active region, still with minimal damage to the gain region and having a well-ascertained current confinement dimension. |
| 公开日期 | 1999-04-13 |
| 申请日期 | 1997-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47650]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HONEYWELL INC. |
| 推荐引用方式 GB/T 7714 | HIBBS-BRENNER, MARY K.,BIARD, JAMES R.. Fabrication of vertical cavity surface emitting laser with current confinement. US5893722. 1999-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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