Method for making an optoelectronic amplifier device, and applications to various optoelectronic DEVICES.
文献类型：专利
| 作者 | BLONDEAU, ROBERT; BOURBIN, YANNICK; RONDI, DANIEL |
| 发表日期 | 1995-06-13 |
| 专利号 | US5424242 |
| 著作权人 | THOMSON-CSF |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for making an optoelectronic amplifier device, and applications to various optoelectronic DEVICES. |
| 英文摘要 | A method for making an optical amplifier according to which a stack of the following layers is made by epitaxy: a first optical guiding layer; a first chemical attack barrier layer; a second optical guiding layer; a second chemical attack barrier layer; an active layer; a confinement layer; and a contact layer. Then at least one amplifier element followed by an optical guide located beneath this amplifier element are etched in these layers. The method can be applied to the making of optoelectronic devices such as modulators, change-over switches, distributors, etc. |
| 公开日期 | 1995-06-13 |
| 申请日期 | 1993-04-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47654]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THOMSON-CSF |
| 推荐引用方式 GB/T 7714 | BLONDEAU, ROBERT,BOURBIN, YANNICK,RONDI, DANIEL. Method for making an optoelectronic amplifier device, and applications to various optoelectronic DEVICES.. US5424242. 1995-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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