Tapered semiconductor laser gain structure with cavity spoiling grooves
文献类型：专利
| 作者 | MISSAGGIA, LEO J.; WANG, CHRISTINE A.; CHINN, STEPHEN R.; KINTZER, EMILY S.; WALPOLE, JAMES N. |
| 发表日期 | 1993-11-09 |
| 专利号 | US5260822 |
| 著作权人 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY A CORPORATION OF MA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Tapered semiconductor laser gain structure with cavity spoiling grooves |
| 英文摘要 | A semiconductor laser gain structure having a tapered gain region comprising cavity spoilers for receiving light which is reflected off of the output facet back into the semiconductor and removing it from the gain region so as to reduce or eliminate self oscillation. The boundaries of the gain region are also designed to have a very low refractive index gradient so as to minimize reflection of light off of the boundaries back into the gain region. The gain structure may be embodied in a semiconductor laser oscillator or semiconductor laser amplifier depending on whether the input facet is or is not, respectively, anti reflection coated. The output facet is anti-reflection coated in either embodiment. |
| 公开日期 | 1993-11-09 |
| 申请日期 | 1992-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47656]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY A CORPORATION OF MA |
| 推荐引用方式 GB/T 7714 | MISSAGGIA, LEO J.,WANG, CHRISTINE A.,CHINN, STEPHEN R.,et al. Tapered semiconductor laser gain structure with cavity spoiling grooves. US5260822. 1993-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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