Semiconductor laser and process for producing the same
文献类型：专利
| 作者 | KITOH, MASAHIRO; OTSUKA, NOBUYUKI; ISHINO, MASATO; MATSUI, YASUSHI; INABA, YUICHI |
| 发表日期 | 2000-08-15 |
| 专利号 | US6104738 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and process for producing the same |
| 英文摘要 | PCT No. PCT/JP96/03837 Sec. 371 Date Nov. 13, 1997 Sec. 102(e) Date Nov. 13, 1997 PCT Filed Dec. 26, 1996 PCT Pub. No. WO97/24787 PCT Pub. Date Jul. 10, 1997In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 3 mu m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1 |
| 公开日期 | 2000-08-15 |
| 申请日期 | 1996-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47663]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KITOH, MASAHIRO,OTSUKA, NOBUYUKI,ISHINO, MASATO,et al. Semiconductor laser and process for producing the same. US6104738. 2000-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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