多波長半導体レーザ素子及びその駆動方法
文献类型：专利
| 作者 | 池田 外充 |
| 发表日期 | 2001-01-19 |
| 专利号 | JP3149961B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 多波長半導体レーザ素子及びその駆動方法 |
| 英文摘要 | PURPOSE:To widen the variable range of the wavelength of the title laser element by a method wherein the laser element is constituted into such a structure that resonators having oscillator lengths of a plurality of different lengths are installed along the resonance direction so as to oscillate the lights of wavelengths to correspond to the respective band gaps of a luminous layer structure and a current can be injected in each resonator independently of other resonators. CONSTITUTION:In a semiconductor layer element, which consists of an optical waveguide structure 4 comprising a luminous layer structure having a plurality of band gaps different from each other and clad layers 3 and 5 laminated holding the structure 4 between them, the semiconductor laser element is constituted into such a structure that resonators having resonator lengths L1 and L2 of a plurality of different lengths are installed along the resonance direction so as to oscillate the lights of wavelengths to correspond to the respective band gaps of the luminous layer structure and a current can be injected in each resonator independently of other resonators. Thereby, a plurality of semiconductor laser elements can be monolithically formed on the same substrate by a simple manufacturing process. |
| 公开日期 | 2001-03-26 |
| 申请日期 | 1991-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 池田 外充. 多波長半導体レーザ素子及びその駆動方法. JP3149961B2. 2001-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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