Fabrication of group III-V nitrides on mesas
文献类型：专利
| 作者 | DUNNROWICZ, CLARENCE J.; ROMANO, LINDA T.; BOUR, DAVID P. |
| 发表日期 | 2000-12-19 |
| 专利号 | US6163557 |
| 著作权人 | BLUESTONE INNOVATIONS, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Fabrication of group III-V nitrides on mesas |
| 英文摘要 | Group III-V nitride films are fabricated on mesas patterned either on substrates such as sapphire substrates, or on mesas patterned on group III-V nitride layers grown on substrates. The mesas provide reduced area surfaces for epitaxially growing group III-V nitride films, to reduce thermal film stresses in the films to reduce cracking. The surfaces of the mesas on which the films are grown are dimensioned and oriented to reduce the number of thin film crack planes that can grow on the mesas. Further cracking reduction in the films can be achieved by thinning the substrate to form membranes. The reduced substrate thickness at the membranes reduces the thermal expansion mismatch tensile stress in the films. The mesas can reduce or eliminate the occurrence of cracks in GaN or AlGaN epitaxial films grown on the mesas, for percentages of aluminum in the AlGaN films of up to about 18%. The improved group III-V nitride films can be used in optoelectronic devices including LEDs and edge and surface emitting laser diodes. |
| 公开日期 | 2000-12-19 |
| 申请日期 | 1998-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47665]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BLUESTONE INNOVATIONS, LLC |
| 推荐引用方式 GB/T 7714 | DUNNROWICZ, CLARENCE J.,ROMANO, LINDA T.,BOUR, DAVID P.. Fabrication of group III-V nitrides on mesas. US6163557. 2000-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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