Semiconductor light emitting device including a hole barrier contiguous to an active layer
文献类型：专利
| 作者 | NOMURA, YOSHINORI; OGATA, HITOSHI |
| 发表日期 | 1991-12-17 |
| 专利号 | US5073805 |
| 著作权人 | OPTOELECTRONICS TECHNOLOGY RESEARCH CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device including a hole barrier contiguous to an active layer |
| 英文摘要 | In a semiconductor light emitting device comprising an active layer, a hole barrier layer is formed in contact with a first surface of the active layer to provide a barrier against holes in the active layer. The barrier layer does not provide a barrier against electrons tunnelling therethrough. A low energy band gap layer is formed on the barrier layer to have a conduction band minimum which is lower than the conduction band minimum of the active layer at least in a part adjacent to the barrier layer. First and second electrodes are in ohmic contact with an n-type and a p-type conductivity layers which are formed on the low energy band gap layer and a second surface of the active layer, respectively. Preferably, the p-type conductivity layer comprises an electron barrier layer on the second surface, a waveguide layer formed on the electron barrier layer to have an energy band gap wider than an energy band gap of the active layer, and a remaining layer formed between the waveguide layer and the second electrode to have an energy band gap wider than the emergy band gap of the waveguide layer. The waveguide layer may be removable without losing high speed capability of the laser. |
| 公开日期 | 1991-12-17 |
| 申请日期 | 1991-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47669]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPTOELECTRONICS TECHNOLOGY RESEARCH CORPORATION |
| 推荐引用方式 GB/T 7714 | NOMURA, YOSHINORI,OGATA, HITOSHI. Semiconductor light emitting device including a hole barrier contiguous to an active layer. US5073805. 1991-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。