Intersubband quantum box semiconductor laser
文献类型：专利
| 作者 | BOTEZ, DAN; ZORY, PETER S.; HSU, CHIA-FU |
| 发表日期 | 1999-09-14 |
| 专利号 | US5953356 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Intersubband quantum box semiconductor laser |
| 英文摘要 | An intersubband quantum box laser structure includes an active structure having a two dimensional array of quantum boxes separated from one another in a semiconductor matrix. The quantum boxes are formed to suppress phonon-assisted transitions, and thus the transitions become primarily of the radiative type. Each quantum box has a multilayer structure including an electron injector, an active region with a quantum well, and an electron mirror. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The mirror reflects electrons at the higher energy level at which they were injected and transmits electrons at the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the active structure to provide conduction across the multiple layer structure and to provide optical confinement of the photons emitted. The semiconductor laser structure may be formed using various material systems, including InGaAs/InGaAsP structures grown on GaAs and InGaAs/AlInAs structures grown on InP. |
| 公开日期 | 1999-09-14 |
| 申请日期 | 1997-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47670]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN,ZORY, PETER S.,HSU, CHIA-FU. Intersubband quantum box semiconductor laser. US5953356. 1999-09-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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