Photo semiconductor device having a multi-quantum well structure
文献类型：专利
| 作者 | NAKAMURA, HITOSHI; SAKANO, SHINJI; INOUE, HIROAKI; KATSUYAMA, TOSHIO; MATSUMURA, HIROYOSHI |
| 发表日期 | 1989-06-20 |
| 专利号 | US4840446 |
| 著作权人 | HITACHI CABLE, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Photo semiconductor device having a multi-quantum well structure |
| 英文摘要 | A multi-quantum well structure which is formed by laminating thin semiconductor layers is provided with means for injecting carriers in a direction which is parallel to the surface of the laminated thin semiconductor layers, whereby it is possible to obtain satisfactory changes in refractive index of the carrier injection portion. For example, if the total reflection region of an optical switch consisting of optical waveguides which cross each other is provided with a multi-quantum well structure wherein carriers are injected in a direction parallel to the surface of the well, the extinction ratio characteristics of the device can be improved. |
| 公开日期 | 1989-06-20 |
| 申请日期 | 1987-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI CABLE, LTD. |
| 推荐引用方式 GB/T 7714 | NAKAMURA, HITOSHI,SAKANO, SHINJI,INOUE, HIROAKI,et al. Photo semiconductor device having a multi-quantum well structure. US4840446. 1989-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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