Surface-emitting-type semiconductor laser device
文献类型：专利
| 作者 | IGA, KENICHI; IBARAKI, AKIRA; KAWASHIMA, KENJI; FURUSAWA, KOTARO; ISHIKAWA, TORU |
| 发表日期 | 1991-05-28 |
| 专利号 | US5020066 |
| 著作权人 | DEVELOPMENT CORPORATION OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface-emitting-type semiconductor laser device |
| 英文摘要 | A surface-emitting-type semiconductor laser device having a buried structure wherein a burying part having a current blocking function is formed around a buried part comprising an active region. A reflecting mirror consisting of a semiconductor multilayer film is installed on the buried part and the burying part, and the Bragg wavelength of this semiconductor multilayer film is set in matching with a longitudinal mode one mode higher than the longitudinal mode of oscillation in pulse operation. This semiconductor multilayer film has a configuration wherein two kinds of GaAlAs layers having different composition ratios of Al are laminated alternately, and the layer thickness of each GaAlAS layer constituting the semiconductor multilayer film is set so as to able to realize the Bragg wavelength calculated theoretically. |
| 公开日期 | 1991-05-28 |
| 申请日期 | 1989-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47679]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | DEVELOPMENT CORPORATION OF JAPAN |
| 推荐引用方式 GB/T 7714 | IGA, KENICHI,IBARAKI, AKIRA,KAWASHIMA, KENJI,et al. Surface-emitting-type semiconductor laser device. US5020066. 1991-05-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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