Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
文献类型：专利
| 作者 | PAOLI, THOMAS L.; EPLER, JOHN E. |
| 发表日期 | 1996-10-08 |
| 专利号 | US5563094 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same |
| 英文摘要 | In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form reversed bias current confinement structures in semiconductor devices, such as heterostructure lasers and array lasers. |
| 公开日期 | 1996-10-08 |
| 申请日期 | 1990-09-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47682]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | PAOLI, THOMAS L.,EPLER, JOHN E.. Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same. US5563094. 1996-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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