Semiconductor laser silicon waveguide substrate, and integrated device
文献类型：专利
| 作者 | AKIYAMA, SUGURU |
| 发表日期 | 2013-06-25 |
| 专利号 | US8472494 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser silicon waveguide substrate, and integrated device |
| 英文摘要 | A semiconductor laser includes: a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating including a phase shift, and a second diffraction grating; a second portion including a light-emitting layer made from a material different from that of the first portion; a laser region including the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating; and a mirror region including the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating. |
| 公开日期 | 2013-06-25 |
| 申请日期 | 2011-08-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47684]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | AKIYAMA, SUGURU. Semiconductor laser silicon waveguide substrate, and integrated device. US8472494. 2013-06-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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