Semiconductor device having a disordered superlattice
文献类型：专利
| 作者 | MURAKAMI, TAKASHI; OTAKI, KANAME; KUMABE, HISAO |
| 发表日期 | 1991-07-09 |
| 专利号 | US5031185 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device having a disordered superlattice |
| 英文摘要 | A method of producing a semiconductor device such as a semiconductor laser having a controllably disordered superlattice. The superlattice is grown epitaxially and in the same epitaxial growth process a heavily selenium doped semiconductor layer is also grown in a known spatial relationship to the superlattice. The doped layer is patterned as by etching and then the device is annealed to diffuse selenium impurities from the doped layer. The time and temperature of annealing are controlled such that the impurities diffuse into and thereby disorder regions of the superlattice layer, leaving a nondisordered region which can serve as a resonator in a laser. |
| 公开日期 | 1991-07-09 |
| 申请日期 | 1990-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47686]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MURAKAMI, TAKASHI,OTAKI, KANAME,KUMABE, HISAO. Semiconductor device having a disordered superlattice. US5031185. 1991-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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