Semiconductor diffraction grating device and semiconductor laser
文献类型：专利
| 作者 | MURATA, MICHIO |
| 发表日期 | 2012-08-14 |
| 专利号 | US8243768 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor diffraction grating device and semiconductor laser |
| 英文摘要 | A semiconductor diffraction grating device includes a semiconductor substrate having a principal surface, a semiconductor core layer and a semiconductor cladding layer provided on the principal surface, and a chirped grating structure provided between the semiconductor core layer and the semiconductor cladding layer. The chirped grating structure includes a first region, a second region, and a third region arranged in that order in a predetermined axis direction, the first, second, and third regions including a plurality of projections constituting a chirped grating. The plurality of projections are provided at placement positions arranged with a predetermined pitch in the predetermined axis direction. The coupling coefficient κ of the chirped grating monotonically increases in the predetermined axis direction to a predetermined value in the first region, remains flat in the second region, and monotonically decreases in the predetermined axis direction from the predetermined value in the third region. |
| 公开日期 | 2012-08-14 |
| 申请日期 | 2010-10-12 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47690]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | MURATA, MICHIO. Semiconductor diffraction grating device and semiconductor laser. US8243768. 2012-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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