半導体レーザ装置、ダブルヘテロウエハおよびその製造方法
文献类型：专利
| 作者 | 大場 康夫; 菅原 秀人 |
| 发表日期 | 1997-12-12 |
| 专利号 | JP2728672B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置、ダブルヘテロウエハおよびその製造方法 |
| 英文摘要 | PURPOSE:To obtain a high performance semiconductor laser device which has high quality InGaAlP/GaAs heterojunctions, a short wavelength and a long life by a method wherein a 1st conductivity type cladding layer or 2nd conductivity type cladding layers are doped with Si. CONSTITUTION:In a semiconductor laser device, double-heterojunction structures 14-18 composed of InxGa1-x-yAlyP layers (0<=y<=1) are formed on a 1st conductivity type GaAs substrate 1 the first conductivity type cladding layer 14 or second conductivity type cladding layers 16 and 18 of the semiconductor laser device are doped with Si. For instance, an Si-doped n-type GaAs buffer layer 12 and an Si-doped n-type InGaP buffer layer 13 are formed on the n-type GaAs substrate 1 Then the double-heterojunction structures composed of the Si-doped n-type InAlP cladding layer 14, the In0.5Ga0.5P active layer 15 and the Mg-doped p-type InAlP cladding layers 16-18 are formed on the buffer layer 13. Further, a p-type InGaAlP contact layer 19, a p-type GaAs layer 20, an Se-doped n-type GaAlAs current blocking layer 21 and so forth are provided. |
| 公开日期 | 1998-03-18 |
| 申请日期 | 1988-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47701]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 大場 康夫,菅原 秀人. 半導体レーザ装置、ダブルヘテロウエハおよびその製造方法. JP2728672B2. 1997-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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