埋め込み構造半導体レーザ
文献类型：专利
| 作者 | 小林 健一 |
| 发表日期 | 1994-10-12 |
| 专利号 | JP1994080855B2 |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 埋め込み構造半導体レーザ |
| 英文摘要 | PURPOSE:To produce the titled laser with high reliability and excellent yield oscillating at low threshold value by a method wherein said laser contains a growing interface and a closing interface of carrier separated from each other. CONSTITUTION:The titled semiconductor laser is composed of a mesa 100 comprising an active layer 30 with quantum well structure made of multilayered thin film and diffused region 50 along the sides of mesa 100 on a semiconductor substrate Besides, the mesa 100 is filled with a burying layer 40 with wider forbidden band width and less refractive index than those of the active layer 30 in the diffused region 50. Through these procedures, a carrier is separated from the interface between the sides of mesa 100 and the burying layer 40 liable to be a non-light emitting recoupling center to be closed since the carrier is closed in the multilayer structured part at the center of mesa 100. Resultantly the semiconductor laser may be provided with highly reliable buried structure at low threshold value since the burying layer 40 is built-in structured supplying the active region 30 with effective current. |
| 公开日期 | 1994-10-12 |
| 申请日期 | 1984-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47705]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | 小林 健一. 埋め込み構造半導体レーザ. JP1994080855B2. 1994-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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