EL semiconductor device
文献类型：专利
| 作者 | KISHINO, KATSUMI; NOMURA, ICHIRO; ASATSUMA, TSUNENORI; TASAI, KUNIHIKO; TAMAMURA, KOSHI; NAKAJIMA, HIROSHI; NAKAMURA, HITOSHI; FUJISAKI, SUMIKO; KIKAWA, TAKESHI |
| 发表日期 | 2011-03-01 |
| 专利号 | US7899104 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | EL semiconductor device |
| 英文摘要 | An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity. |
| 公开日期 | 2011-03-01 |
| 申请日期 | 2008-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47709]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | KISHINO, KATSUMI,NOMURA, ICHIRO,ASATSUMA, TSUNENORI,et al. EL semiconductor device. US7899104. 2011-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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