III-V group GaN-based compound semiconductor device
文献类型：专利
| 作者 | SON, JOONG-KON; HA, KYOUNG-HO; RYU, HAN-YOUL |
| 发表日期 | 2010-11-02 |
| 专利号 | US7826505 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-V group GaN-based compound semiconductor device |
| 英文摘要 | A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0 |
| 公开日期 | 2010-11-02 |
| 申请日期 | 2006-06-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47716]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SON, JOONG-KON,HA, KYOUNG-HO,RYU, HAN-YOUL. III-V group GaN-based compound semiconductor device. US7826505. 2010-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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