Semiconductor laser element having tensile-strained quantum-well active layer
文献类型：专利
| 作者 | ASANO, HIDEKI |
| 发表日期 | 2008-04-22 |
| 专利号 | US7362786 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element having tensile-strained quantum-well active layer |
| 英文摘要 | In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch Δa/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, −0.6%≦Δa/a≦−0.3% and 10 nm≦dw≦20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc≧400 μm and Rf×Rr≧0.5. |
| 公开日期 | 2008-04-22 |
| 申请日期 | 2005-03-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47717]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | ASANO, HIDEKI. Semiconductor laser element having tensile-strained quantum-well active layer. US7362786. 2008-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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