Optical semiconductor element
文献类型：专利
| 作者 | KAWASAKI, MASASHI; KOINUMA, HIDEOMI; OHTOMO, AKIRA; SEGAWA, YUSABURO; YASUDA, TAKASHI |
| 发表日期 | 2000-05-02 |
| 专利号 | US6057561 |
| 著作权人 | JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor element |
| 英文摘要 | A ZnO thin film is fabricated on the c-surface of a sapphire substrate through use of a laser molecular beam epitaxy (MBE) method-which is effective for epitaxial growth of an oxide thin film through control at an atomic level. The thus-formed ZnO thin film has a considerably high crystallinity; the half width of an X-ray rocking curve was 0.06 DEG . The thin film is of an n-type and has a carrier density of 4x1017/cm3. The thin film fabricated in a state in which oxygen partial pressure is held constant at 10-6 Torr has a structure in which hexagon-shaped nanocrystals of uniform size are close-packed, reflecting the crystal behavior of a wurtzite type. Since in each nanocrystal there is observed a spiral structure formed by steps of a unit cell height (0.5 nm), the nanocrystals are considered to grow in a thermodynamically equilibrated state. The lateral size of the nanocrystal can be controlled within the range of approximately 50 to 250 nm. A II-oxide optical semiconductor element utilizes a zinc oxide thin film containing magnesium or cadmium in a solid-solution state. Through addition of magnesium or cadmium, the band gap of zinc oxide can be controlled within the range of 3 to 4 eV. |
| 公开日期 | 2000-05-02 |
| 申请日期 | 1998-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
| 推荐引用方式 GB/T 7714 | KAWASAKI, MASASHI,KOINUMA, HIDEOMI,OHTOMO, AKIRA,et al. Optical semiconductor element. US6057561. 2000-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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