Semiconductor optical integrated device and light receiver using said device
文献类型：专利
| 作者 | AOKI, MASAHIRO; SANO, HIROHISA; SAKANO, SHINJI; SUZUKI, MAKOTO; TAKAHASHI, MAKOTO; UOMI, KAZUHISA; IDO, TATEMI; TAKAI, ATSUSHI |
| 发表日期 | 1996-11-12 |
| 专利号 | US5574289 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical integrated device and light receiver using said device |
| 英文摘要 | Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication. |
| 公开日期 | 1996-11-12 |
| 申请日期 | 1993-03-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47724]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | AOKI, MASAHIRO,SANO, HIROHISA,SAKANO, SHINJI,et al. Semiconductor optical integrated device and light receiver using said device. US5574289. 1996-11-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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