Semiconductor device with strained-layer superlattice
文献类型：专利
| 作者 | USAMI, MASASHI; MATSUSHIMA, YUICHI |
| 发表日期 | 1994-04-26 |
| 专利号 | US5306924 |
| 著作权人 | KDDI CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device with strained-layer superlattice |
| 英文摘要 | A semiconductor device with a strained-layer superlattice is disclosed, in which a first semiconductor and a second semiconductor of a lattice constant smaller than that of the first semiconductor are stacked on a clad layer of a lattice constant substantially intermediate between those of the first and second semiconductors to form the strained-layer superlattice. The lattice constant of the strained-layer superlattice in the direction of its plane in the free space is nearly equal to the lattice constant of the clad layer. A third semiconductor of a lattice constant substantially equal to that of the clad layer is laminated between the first and second semiconductors stacked one on the other. |
| 公开日期 | 1994-04-26 |
| 申请日期 | 1993-03-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47726]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KDDI CORPORATION |
| 推荐引用方式 GB/T 7714 | USAMI, MASASHI,MATSUSHIMA, YUICHI. Semiconductor device with strained-layer superlattice. US5306924. 1994-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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