P-type electrode structure and a semiconductor light emitting element using the same structure
文献类型：专利
| 作者 | IWATA, HIROSHI |
| 发表日期 | 1999-04-27 |
| 专利号 | US5898190 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | P-type electrode structure and a semiconductor light emitting element using the same structure |
| 英文摘要 | A p-type electrode structure having low resistance and a high yield light emitting element operable at low operating voltage is disclosed. On a substrate is formed an n-type clad layer, an active layer, a p-type semiconductor layer, a current structure layer, an n-type semiconductor layer and a metal layer. The energy level of a conduction band edge of the n-type semiconductor layer is deeper than that of a valence band edge of the p-type semiconductor layer, and the Fermi level of the metal layer is shallower than the energy level of a conduction band edge of the n-type semiconductor layer. |
| 公开日期 | 1999-04-27 |
| 申请日期 | 1997-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47732]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | IWATA, HIROSHI. P-type electrode structure and a semiconductor light emitting element using the same structure. US5898190. 1999-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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