面形発光素子
文献类型：专利
| 作者 | 川上 剛司; 山本 喜久; 小暮 攻; 岡安 雅信; 上原 信吾 |
| 发表日期 | 1998-02-06 |
| 专利号 | JP2744503B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 面形発光素子 |
| 英文摘要 | PURPOSE:To apply on an InGaAsP/InP long wave light emitting element, an AlGaInP visible light element, etc., by forming the half widths of a cavity mode and an oscillating light wavelength in the same degree. CONSTITUTION:An active region 2 is formed of a light emitting layer of an InGaAs distortion quantum well, and a GRIN (Graded Index) structure 2 of a GaAs-Al0.6Ga0.4As, an Al0.6Ga0.4As is used as a spacer, and a mirror interval is set to 1 or 1/2 wavelength. Multilayer film mirrors 3, 4 are made of lambda/4n of the Al0.6Ga0.4As, the antinode of a standing wave in a cavity is disposed at the center of the cavity, and a light emitting layer is disposed at the position. The cavity is all formed at lambda2 thickness of the Al0.6Ga0.4As. When the values of reflectivities of both sides are near, a surface type bistable logic element is used to receive a signal light from one side and to output a lasing light to the other. The reflectivities are arbitrarily so set according to the photodetecting sensitivity and light emitting output of the element that the half power width of a cavity mode and the half power width of the emitting light wavelength are formed in the same degree. When one reflectivity is set to approximately '1' and the other reflectivity is set to a value smaller than it in an asymmetrical structure, a light to be emitted toward a direction of smaller reflectivity is obtained. |
| 公开日期 | 1998-04-28 |
| 申请日期 | 1990-02-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 川上 剛司,山本 喜久,小暮 攻,等. 面形発光素子. JP2744503B2. 1998-02-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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