Method for the making of surface-emitting laser diodes with mechanical mask, the apertures having inclined flanks
文献类型：专利
| 作者 | MAUREL, PHILIPPE; GARCIA, JEAN-CHARLES; HIRTZ, JEAN-PIERRE |
| 发表日期 | 1997-05-06 |
| 专利号 | US5627100 |
| 著作权人 | THOMSON-CSF |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for the making of surface-emitting laser diodes with mechanical mask, the apertures having inclined flanks |
| 英文摘要 | A method for making a set of surface-emitting laser diodes comprises the making of reflectors by the epitaxial growth of at least one semiconductor material through a mask having apertures with inclined flanks. This method leads to the obtaining of the Bragg reflectors obtained in situ, removing the need for the ion etching of a semiconductor substrate followed by a phase for the conditioning of the surface of the sample before the preparation of the desired laser structure. Application: optical power source. |
| 公开日期 | 1997-05-06 |
| 申请日期 | 1995-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47740]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THOMSON-CSF |
| 推荐引用方式 GB/T 7714 | MAUREL, PHILIPPE,GARCIA, JEAN-CHARLES,HIRTZ, JEAN-PIERRE. Method for the making of surface-emitting laser diodes with mechanical mask, the apertures having inclined flanks. US5627100. 1997-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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