Method for the making of surface-emitting laser diodes with mechanical mask, the apertures having inclined flanks
文献类型:专利
作者 | MAUREL, PHILIPPE; GARCIA, JEAN-CHARLES; HIRTZ, JEAN-PIERRE |
发表日期 | 1997-05-06 |
专利号 | US5627100 |
著作权人 | THOMSON-CSF |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Method for the making of surface-emitting laser diodes with mechanical mask, the apertures having inclined flanks |
英文摘要 | A method for making a set of surface-emitting laser diodes comprises the making of reflectors by the epitaxial growth of at least one semiconductor material through a mask having apertures with inclined flanks. This method leads to the obtaining of the Bragg reflectors obtained in situ, removing the need for the ion etching of a semiconductor substrate followed by a phase for the conditioning of the surface of the sample before the preparation of the desired laser structure. Application: optical power source. |
公开日期 | 1997-05-06 |
申请日期 | 1995-09-07 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/47740] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | THOMSON-CSF |
推荐引用方式 GB/T 7714 | MAUREL, PHILIPPE,GARCIA, JEAN-CHARLES,HIRTZ, JEAN-PIERRE. Method for the making of surface-emitting laser diodes with mechanical mask, the apertures having inclined flanks. US5627100. 1997-05-06. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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