Structure of high power edge emission laser diode
文献类型：专利
| 作者 | LU, TIEN-CHANG; CHEN, CHYONG-HUA |
| 发表日期 | 2009-08-18 |
| 专利号 | US7577175 |
| 著作权人 | NATIONAL CHIAO TUNG UNIVERSITY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Structure of high power edge emission laser diode |
| 英文摘要 | A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime. |
| 公开日期 | 2009-08-18 |
| 申请日期 | 2007-11-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47743]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL CHIAO TUNG UNIVERSITY |
| 推荐引用方式 GB/T 7714 | LU, TIEN-CHANG,CHEN, CHYONG-HUA. Structure of high power edge emission laser diode. US7577175. 2009-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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