Method of making semiconductor laser devices
文献类型：专利
| 作者 | SHIMOYAMA, KENJI; GOTOH, HIDEKI |
| 发表日期 | 1992-09-08 |
| 专利号 | US5145807 |
| 著作权人 | MITSUBISHI KASEI CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making semiconductor laser devices |
| 英文摘要 | Carrier injection layers are formed on an AlxGa1-x As clad layer of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas sources, whereby it is not required to mesa-etch embedding regions to a depth reaching a substrate. The formation of any separate blocking layer is dispensed with, any possible influence of the substrate is elminated, and the time constant is decreased by decreasing the inter-electrode capacity. |
| 公开日期 | 1992-09-08 |
| 申请日期 | 1990-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47744]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI KASEI CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIMOYAMA, KENJI,GOTOH, HIDEKI. Method of making semiconductor laser devices. US5145807. 1992-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。