Buried heterostructure lasers using mocvd growth over patterned substrates
文献类型：专利
| 作者 | BERGER PAUL RAYMOND; DUTTA NILOY KUMAR; HOBSON WILLIAM SCOTT; LOPATA JOHN |
| 发表日期 | 1997-12-09 |
| 专利号 | CA2084820C |
| 著作权人 | AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried heterostructure lasers using mocvd growth over patterned substrates |
| 英文摘要 | This invention pertains to buried heterostructure lasers which have been fabricated using a single step MOCVD growth of an MQW laser structure over a pattern etched GaAs substrate. The wet chemical etching of grooves having a dovetailed cross-section and being parallel to the [011] direction in GaAs substrates produced reentrant mesas which resulted in isolated laser active regions buried by the AlGaAs cladding layer. The 250 µm long uncoated lasers emit at about 1 µm. Lasers with coated facets have threshold currents of 20 mA and emit >100 mW per facet under room temperature operation. The external differential quantum efficiency for currents of from 30 mA to about 50 mA is found to be nearly independent of temperature in the range of 10°C to 90°C suggesting a low temperature dependence of leakage current. |
| 公开日期 | 1993-07-25 |
| 申请日期 | 1992-12-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47745]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
| 推荐引用方式 GB/T 7714 | BERGER PAUL RAYMOND,DUTTA NILOY KUMAR,HOBSON WILLIAM SCOTT,et al. Buried heterostructure lasers using mocvd growth over patterned substrates. CA2084820C. 1997-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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