Superluminescent diode and method for implementing the same
文献类型：专利
| 作者 | OH, SU HWAN; KIM, MIN SU |
| 发表日期 | 2017-03-07 |
| 专利号 | US9590135 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Superluminescent diode and method for implementing the same |
| 英文摘要 | A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode. |
| 公开日期 | 2017-03-07 |
| 申请日期 | 2016-06-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47758]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | OH, SU HWAN,KIM, MIN SU. Superluminescent diode and method for implementing the same. US9590135. 2017-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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