Method for fabricating semiconductor light-emitting device
文献类型：专利
| 作者 | UEDA, DAISUKE; TAKIGAWA, SHINICHI |
| 发表日期 | 2004-06-08 |
| 专利号 | US6746948 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating semiconductor light-emitting device |
| 英文摘要 | An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III-V nitride semiconductor with oxygen atoms. |
| 公开日期 | 2004-06-08 |
| 申请日期 | 2002-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47760]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | UEDA, DAISUKE,TAKIGAWA, SHINICHI. Method for fabricating semiconductor light-emitting device. US6746948. 2004-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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