Mode-locked semiconductor laser with tunable external cavity
文献类型：专利
| 作者 | FIGUEROA, LUIS |
| 发表日期 | 1984-05-01 |
| 专利号 | US4446557 |
| 著作权人 | HUGHES ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Mode-locked semiconductor laser with tunable external cavity |
| 英文摘要 | A mode-locked gallium arsenide crystal laser has a cavity length equal to one-half its principal noise resonance wavelength and an electrode overlying a portion of the crystal, the remaining portion being a self-aligned region diffused or implanted with impurities comprising saturable absorbing centers. An anti-reflective coating is placed on a crystal facet facing an external mirror defining one end of the laser cavity. The resulting laser has improved power, frequency and temporal stability. |
| 公开日期 | 1984-05-01 |
| 申请日期 | 1981-11-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47765]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HUGHES ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | FIGUEROA, LUIS. Mode-locked semiconductor laser with tunable external cavity. US4446557. 1984-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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