Surface emission type semiconductor laser, and method for producing the same
文献类型：专利
| 作者 | IWANO, HIDEAKI; MORI, KATSUMI; KONDO, TAKAYUKI; ASAKA, TATSUYA |
| 发表日期 | 2001-10-10 |
| 专利号 | EP0691045B1 |
| 著作权人 | SEIKO EPSON CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Surface emission type semiconductor laser, and method for producing the same |
| 英文摘要 | A surface emission type semiconductor laser has insulation layers (107, 108) embedding separation grooves for partially separating the waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror (104) and a dielectric multilayer film mirror (111), and a quantum well active layer (105). A surface emission type semiconductor laser is designed such that the lasing wavelength lambda G of an edge emission type semiconductor laser having the same semiconductor layers as those of the optical resonator is set to be shorter than a desired lasing wavelength lambda EM of the surface emission type semiconductor laser by a given differential wavelength (gain offset) DELTA lambda EM. |
| 公开日期 | 2001-10-10 |
| 申请日期 | 1995-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORPORATION |
| 推荐引用方式 GB/T 7714 | IWANO, HIDEAKI,MORI, KATSUMI,KONDO, TAKAYUKI,et al. Surface emission type semiconductor laser, and method for producing the same. EP0691045B1. 2001-10-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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