Semiconductor heterointerface optical waveguide
文献类型：专利
| 作者 | ALFERNESS, RODNEY C.; DENTAI, ANDREW G.; JOYNER, JR., CHARLES H. |
| 发表日期 | 1988-06-14 |
| 专利号 | US4751555 |
| 著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED, A CORP. OF NEW YORK |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor heterointerface optical waveguide |
| 英文摘要 | Low loss semiconductor waveguides for supporting propagation of optical signals over a wide range of wavelengths are achieved by growing at least two epitaxial layers of dopant material contiguous along a major surface of each layer to form a heterointerface therebetween. At least one of the epitaxial layers includes a sufficient concentration of semiconductor material to cause strain via lattice mismatch substantially at and near the heterointerface. The strain induces a change in refractive index such that the heterointerface exhibits a substantially higher refractive index than a portion of each epitaxial layer proximate to the heterointerface. The resulting waveguide is capable of supporting propagation of optical signals substantially along the heterointerface. In one example, contiguous epitaxial layers of InP and InGaP form a waveguide for optical signals at wavelengths greater than 0.93 .mu.m. The concentration of Ga in the InGaP epitaxial layer is varied from 10.sup.18 to 10.sup.20 cm.sup.-3 to increase the refractive index difference between the heterointerface and the immediate surrounding layers. |
| 公开日期 | 1988-06-14 |
| 申请日期 | 1987-05-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47772]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED, A CORP. OF NEW YORK |
| 推荐引用方式 GB/T 7714 | ALFERNESS, RODNEY C.,DENTAI, ANDREW G.,JOYNER, JR., CHARLES H.. Semiconductor heterointerface optical waveguide. US4751555. 1988-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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