Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array
文献类型：专利
| 作者 | IWAI, NORIHIRO; TAKAKI, KEISHI; IMAI, SUGURU |
| 发表日期 | 2011-03-15 |
| 专利号 | US7907653 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array |
| 英文摘要 | In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrate 10 is comprised of: a semiconductor lower DBR mirror 12, a cladding layer 14, a n-type contact layer 16, an active layer 18, an electric current constricting layer 20, a p-type cladding layer 22, a p-type contact layer 24, a phase adjusting layer 36 and a dielectric upper DBR mirror 28. The surface emitting laser should be formed such that the diameter X (μm) of the opening diameter of the previously mentioned electric current constricting layer 20 and diameter Y (μm) of the phase adjusting layer satisfy the following relation: X+9λ≦Y≦X+5.0λ (wherein λ indicates oscillation wavelength (μm) of the surface emitting laser). |
| 公开日期 | 2011-03-15 |
| 申请日期 | 2009-02-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47773]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD |
| 推荐引用方式 GB/T 7714 | IWAI, NORIHIRO,TAKAKI, KEISHI,IMAI, SUGURU. Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array. US7907653. 2011-03-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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