Integrated semiconductor laser producing light of different wavelengths at respective active regions
文献类型：专利
| 作者 | GOTO, KATSUHIKO |
| 发表日期 | 1992-06-23 |
| 专利号 | US5124279 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated semiconductor laser producing light of different wavelengths at respective active regions |
| 英文摘要 | A method of making an integrated semiconductor laser on a common substrate including at least two active regions, each active region oscillating at a respective, different wavelength, including producing a precursor laser structure by successively growing on a semiconductor substrate a first conductivity type semiconductor first cladding layer, an active layer including at least one compound semiconductor quantum well layer sandwiched between compound semiconductor quantum barrier layers, and a second conductivity type semiconductor second cladding layer, the quantum barrier layers having a larger energy band gap than and including at least one more element than the quantum well layer, annealing the precursor structure including controlling at first and second spaced apart regions the diffusion of the at least one more element from the quantum barrier layers into the quantum well layer to produce first and second spaced apart active regions in the active layer having different effective lasing energy band gaps, and forming respective electrical contacts to the first and second cladding layers on opposite sides of each of the first and second active regions. |
| 公开日期 | 1992-06-23 |
| 申请日期 | 1990-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47774]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | GOTO, KATSUHIKO. Integrated semiconductor laser producing light of different wavelengths at respective active regions. US5124279. 1992-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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