Semiconductor light-emitting device using graded multi quantum barrier
文献类型：专利
| 作者 | WATATANI, CHIKARA; HANAMAKI, YOSHIHIKO |
| 发表日期 | 2004-10-12 |
| 专利号 | US6803597 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light-emitting device using graded multi quantum barrier |
| 英文摘要 | In a semiconductor light-emitting device, an active layer has a multi quantum well structure (MQW) barrier layers and quantum well layers alternately arranged. Each of the cladding layers has a multi quantum barrier structure (MQB) including barrier layers and well layers alternately arranged. The multi quantum barrier (MQB) of each of the cladding layers varies in a graded or stepwise form. Thus, charge carriers are prevented from overflowing from the active layer, preventing cut-off of a guided wave mode, increasing reflectance of electrons entering the energy barriers, and improving temperature characteristics. |
| 公开日期 | 2004-10-12 |
| 申请日期 | 2002-12-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47794]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | WATATANI, CHIKARA,HANAMAKI, YOSHIHIKO. Semiconductor light-emitting device using graded multi quantum barrier. US6803597. 2004-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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