Light emitting compositional semiconductor device
文献类型：专利
| 作者 | LOBENTANZER, HANS; STOLZ, WOLFGANG; PLOOG, KLAUS; NAGLE, JULIEN |
| 发表日期 | 1991-10-15 |
| 专利号 | US5057881 |
| 著作权人 | MAX-PLANCK GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFTEN E.V. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting compositional semiconductor device |
| 英文摘要 | A multiple quantum well light emitting compositional semiconductor device such as a laser diode or a light emitting diode has an active region comprising an alternating sequence of layers of well layer material and of barrier layer material. The thickness of the barrier layer and of the adjacent well layers is chosen such that for one type of charge carrier a relatively high probability exists for such charge carriers to be present in the barrier region whereas the other type of charge carriers are localized in the potential wells. In this way it is possible to reduce the probability of non-radiative Auger recombination processes occurring thus reducing the threshold current and increasing the quantum efficiency of the device. This is particularly important since material systems with a small bandgap which lase at long wavelengths suitable for optical fibre transmission normally suffer performance penalties due to non-radiative Auger recombination and these penalties can be substantially reduced by tailoring the layer thicknesses to achieve the described probability distributions. |
| 公开日期 | 1991-10-15 |
| 申请日期 | 1989-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47799]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MAX-PLANCK GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFTEN E.V. |
| 推荐引用方式 GB/T 7714 | LOBENTANZER, HANS,STOLZ, WOLFGANG,PLOOG, KLAUS,et al. Light emitting compositional semiconductor device. US5057881. 1991-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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