Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof
文献类型：专利
| 作者 | KUNIYASU, TOSHIAKI; YAMANAKA, FUSAO; FUKUNAGA, TOSHIAKI |
| 发表日期 | 2005-05-03 |
| 专利号 | US6888866 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof |
| 英文摘要 | An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter. |
| 公开日期 | 2005-05-03 |
| 申请日期 | 2001-10-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47801]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | KUNIYASU, TOSHIAKI,YAMANAKA, FUSAO,FUKUNAGA, TOSHIAKI. Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof. US6888866. 2005-05-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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