Compound semiconductor light emitting device
文献类型:专利
作者 | HORIE, HIDEYOSHI; OHTA, HIROTAKA; FUJIMORI, TOSHINARI |
发表日期 | 2004-01-13 |
专利号 | US6677618 |
著作权人 | MITSUBISHI CHEMICAL CORPORATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Compound semiconductor light emitting device |
英文摘要 | Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime. |
公开日期 | 2004-01-13 |
申请日期 | 1999-12-03 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/47804] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI CHEMICAL CORPORATION |
推荐引用方式 GB/T 7714 | HORIE, HIDEYOSHI,OHTA, HIROTAKA,FUJIMORI, TOSHINARI. Compound semiconductor light emitting device. US6677618. 2004-01-13. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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