中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Compound semiconductor light emitting device

文献类型:专利

作者HORIE, HIDEYOSHI; OHTA, HIROTAKA; FUJIMORI, TOSHINARI
发表日期2004-01-13
专利号US6677618
著作权人MITSUBISHI CHEMICAL CORPORATION
国家美国
文献子类授权发明
其他题名Compound semiconductor light emitting device
英文摘要Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime.
公开日期2004-01-13
申请日期1999-12-03
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/47804]  
专题半导体激光器专利数据库
作者单位MITSUBISHI CHEMICAL CORPORATION
推荐引用方式
GB/T 7714
HORIE, HIDEYOSHI,OHTA, HIROTAKA,FUJIMORI, TOSHINARI. Compound semiconductor light emitting device. US6677618. 2004-01-13.

入库方式: OAI收割

来源:西安光学精密机械研究所

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