Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser
文献类型：专利
| 作者 | AMANN, MARKUS CHRISTIAN |
| 发表日期 | 2008-05-20 |
| 专利号 | US7376163 |
| 著作权人 | VERTILAS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser |
| 英文摘要 | Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In addition to a tunnel junction on the p-side of the active zone, the tunnel junction borders a second n-doped semi-conductor layer with the exception of an area forming an aperture. An n-doped layer is provided between the layer provided for the tunnel junction and the at least one p-doped semiconductor layer. The tunnel junction may be arranged in a maximum or minimum of the vertical intensity distribution of the electric field strength. This enables surface-emitting laser diodes to be produced in high yields with stabilization of the lateral single-mode operation, high performance and wave guiding properties. |
| 公开日期 | 2008-05-20 |
| 申请日期 | 2003-11-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47811]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VERTILAS GMBH |
| 推荐引用方式 GB/T 7714 | AMANN, MARKUS CHRISTIAN. Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser. US7376163. 2008-05-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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