半導体レーザ装置および光通信システム
文献类型：专利
| 作者 | 岡井 誠; 魚見 和久; 辻 伸二; 坂野 伸治; 茅野 直樹 |
| 发表日期 | 1998-09-11 |
| 专利号 | JP2825508B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置および光通信システム |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device capable of varying large in a wavelength by a method wherein a feedback region provided with an optical waveguide region which guides the light from an active layer and a perturvation part with a ununiform period distribution, and a means which changes the strength of an optical coupling of the light which propagates in the feedback region with a part of the perturvation part are provided. CONSTITUTION:A substrate 101, an active region 112, formed on the substrate 101, provided with an active layer 103 which emits light by injected carriers, a feedback region 113 provided with an optical waveguide region 105 which guides the light from the active layer 103 and a perturvation part 111 with a ununiform period distribution, and a means 107 which changes the strength of an optical coupling of the light that propagates in the feedback region 113 with a part of the perturvation part 11 are provided. For instance, the optical waveguide region 105 is formed of a structure comparatively large in a refractive index, and the perturvation part 111 is formed into a diffraction grating which changes gradually in periods. And, two or more isolating electrodes 107 are provided as a means which changes the strength of an optical coupling of the light that propagates inside the feedback region 113 with a partial region of the perturvation part 11 |
| 公开日期 | 1998-11-18 |
| 申请日期 | 1988-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47818]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 岡井 誠,魚見 和久,辻 伸二,等. 半導体レーザ装置および光通信システム. JP2825508B2. 1998-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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